?2002 fairchild semiconductor corporation rev. a2, august 2002 2N6518 pnp epitaxial silicon transistor absolute maximum ratings t a =25 c unless otherwise noted ? refer to 2n6520 for graphs electrical characteristics t a =25 c unless otherwise noted * pulse test: pulse width 300 s, duty cycle 2% symbol parameter value units v cbo collector-base voltage -250 v v ceo collector-emitter voltage -250 v v ebo emitter-base voltage -5 v i c collector current -500 ma i b base current -250 ma p c collector power dissipation 625 mw derate above 25 c5mw/ c t j junction temperature 150 c t stg storage temperature -55 ~ 150 c symbol parameter test condition min. max. units bv cbo * collector-base breakdown voltage i c = -100 a, i e =0 -250 v bv ceo collector-emitter breakdown voltage i c = -1ma, i b =0 -250 v bv ebo emitter-base breakdown voltage i e = -10 a, i c =0 -5 v i cbo collector cut-off current v cb = -150v, i e =0 -50 na i ebo emitter cut-off current v eb = -4v, i c =0 -50 na h fe * dc current gain v ce = -10v, i c = -1ma v ce = -10v, i c = -10ma v ce = -10v, i c = -30ma v ce = -10v, i c = -50ma v ce = -10v, i c = -100ma 35 50 50 45 25 300 220 v ce (sat) collector-emitter saturation voltage i c = -10ma, i b = -1ma i c = -20ma, i b = -2ma i c = -30ma, i b = -3ma i c = -50ma, i b = -5ma -0.30 -0.35 -0.50 -1 v v v v v be (sat) base-emitter saturation voltage i c = -10ma, i b = -1ma i c = -20ma, i b = -2ma i c = -30ma, i b = -3ma -0.75 -0.85 -0.90 v v v v be (on) base-emitter on voltage v ce = -10v, i c = -100ma -2 v f t * current gain bandwidth product v ce = -20v, i c = -10ma, f=20mhz 40 200 mhz c ob output capacitance v cb = -20v, i e =0, f=1mhz 6 pf c eb emitter-base capacitance v eb = -0.5v, i c =0, f=1mhz 100 pf t on turn on time v be (off)= -2v, v cc = -100v i c = -50ma, i b1 = -10ma 200 ns t off turn off time v cc = -100v, i c = -50ma i b1 =i b2 =10ma 3.5 ns 2N6518 high voltage transistor ? collector-emitter voltage: v ceo = -250v ? collector dissipation: p c (max)=625mw ? complement to 2n6515 1. emitter 2. base 3. collector to-92 1
0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92 package dimensions 2N6518 dimensions in millimeters ?2002 fairchild semiconductor corporation rev. a2, august 2002
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